Invited talks

  • Edward S. Bielejec, Sandia National Laboratories, Albuquerque, USA,
    Fabrication of Single Atom Devices by Direct Write Nanofabrication
  • Ivana Capan, Ruđer Bošković Institute, Laboratory for Semiconductors, Zagreb, Croatia,
    What can we learn about radiation induced defect centers with capacitance transient techniques: energy level diagrams, thermal stability, introduction rates and more
  • David Cox, Advanced Technologies Institute, University of Surrey, Guildford, UK
    Deterministic implantation using FIB: The battle with statistics
  • Georgy Astakhov, Institute of Ion Beam Physics and Materials Research, HZDR, Germany
    Effect of irradiation on defect coherence properties in silicon carbide
  • Gregor Hlawacek, Institute of Ion Beam Physics and Materials Research, HZDR, Germany
    In-situ experiments and characterization in the Helium Ion Microscope
  • Guanghua Du, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China,
    Nano structure fabrication using single heavy ions of MeV/amu energy range, techniques and applications
  • Jacopo Forneris, Università degli Studi di Torino, Solid State Physics Group, Torino, Italy,
    Fabrication of color centers in diamond by ion implantation for single-photon sources engineering and quantum sensing applications
  • Jan Meijer, Universität Leipzig, Felix Bloch Institute for Solid State Physics, Leipzig, Germany
    Deterministic single ion implantation: A door opener for quantum technology products
  • Jérôme Tribollet, Institut de Chimie, Université de Strasbourg, France
    SiC-YiG quantum sensor for surface EPR at X band: concept and first experimental developments
  • Juha Muhonen, Department of Physics, Nanoscience Center, University of Jyväskylä, Finland
    Silicon quantum technologies using spins of implanted donor atoms
  • Ben Murdin, Photonics and Quantum Sciences Group, Department of Physics, University of Surrey, Guildford, UK
  • Takeshi Ohshima, Quantum Beam Science Research Directorate, Takasaki Advanced Radiation Research Institute, Takasaki, Japan
    Creation of silicon vacancy in silicon carbide using proton beam writing techniques for quantum sensing
  • Michal Pomorski, CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette, France
    Development and applications of diamond membrane detectors
  • Ferdinand Schmidt-Kaler, Johannes Gutenberg-Universität Mainz, Institut für Physik, Mainz, Germany
    A linear Paul trap for catching, sympathetic cooling, identifying and shooting out ions: Deterministic doping solids for quantum information processing and simulation
  • Zdravko Siketić, Ruđer Bošković Institute, Laboratory for ion beam interactions, Zagreb, Croatia
    Capabilities of microanalysis using single MeV ions

Technical reports*

  • Cheng-Wei Lee, Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, USA
    Hot-electron enhancement of oxygen diffusion in MgO under proton irradiation from first principles
  • Frederico Picolo, Università degli Studi di Torino, Solid State Physics Group, Torino, Italy
    Ion beam modification of diamond for biosensing application: from nanoparticle sensing and drug delivery to bulk electrochemical sensors
  • Jacques O’Connell, Nelson Mandela University, Port Elizabeth, South Africa
    TEM characterization of SHI based material modification
  • Marko Karlušić, Ruđer Bošković Institute, Laboratory for semiconductors, Zagreb, Croatia
    Swift heavy ion irradiated effects in graphene and gallium nitride
  • Mateus Masteghin, Department of Physics, University of Surrey, Guildford, UK
    Liquid Metal Alloy sources for Quantum Applications
  • Marco Peres, Instituto Superior Técnico, Universidade de Lisboa, Portugal
    In Situ Characterization and Modification of β-Ga2O3 Flakes Using an Ion Micro-Probe
  • Nathan Cassidy, Department of Physics, University of Surrey, Guildford, UK
    Single Ion Detection Counting Statistics - towards 99% detection
  • Natko Skukan, Ruđer Bošković Institute, Laboratory for ion beam interactions, Zagreb, Croatia
    Charge multiplication in diamond
  • Paul Räcke, Leibniz Institute of Surface Engineering (IOM), Leipzig, Germany, Image charge detection statistics relevant for deterministic ion implantation

* Additional contributions are welcome; please contact one of the Workshop chairs with your suggestions (milko.jaksic@irb.hr or ettore.vittone@unito.it)

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