Schedule

Focused MeV Proton Beams for 3D Nano-Lithography and Nuclear Microscopy: Outlook towards single digit nanometer beam size (1)

Jeroen Van Kan, National University of Singapore

Duration: 35'

Quantum computers using donors in silicon: from physics to architecture tolerances (2)

Ben Murdin, Photonics and Quantum Sciences Group, Department of Physics, University of Surrey, Guildford, UK

Duration: 35'

Silicon quantum technologies using spins of implanted donor atoms (3)

Juha Muhonen, Department of Physics, Nanoscience Center, University of Jyväskylä, Finland

Duration: 35'

Deterministic single ion implantation: A door opener for quantum technology products (4)

Jan Meijer, Universität Leipzig, Felix Bloch Institute for Solid State Physics, Leipzig, Germany

Duration: 35'

Deterministic implantation using FIB: The battle with statistics (5)

David Cox, Advanced Technologies Institute, University of Surrey, Guildford, UK

Duration: 35'

A linear Paul trap for catching, sympathetic cooling, identifying and shooting out ions: Deterministic doping solids for quantum information processing and simulation (8)

Ferdinand Schmidt-Kaler, Johannes Gutenberg-Universität Mainz, Institut für Physik, Mainz, Germany

Duration: 35'

Fabrication of Single Atom Devices by Direct Write Nanofabrication (9)

Edward S. Bielejec, Sandia National Laboratories, Albuquerque, USA

Duration: 35'

Fabrication of color centers in diamond by ion implantation for single-photon sources engineering and quantum sensing applications (11)

Jacopo Forneris, National Institute for Nuclear Physics (INFN), Torino, Italy

Duration: 35'

Development and applications of diamond membrane detectors (12)

Michal Pomorski, CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette, France

Duration: 35'

SiC-YiG quantum sensor for surface EPR at X band: concept and first experimental developments (14)

Jérôme Tribollet, Institut de Chimie, Université de Strasbourg, France

Duration: 35'

Effect of irradiation on defect coherence properties in silicon carbide (15)

Georgy Astakhov, Institute of Ion Beam Physics and Materials Research, HZDR, Germany

Duration: 35'

Creation of silicon vacancy in silicon carbide using proton beam writing techniques for quantum sensing (16)

Takeshi Ohshima, Quantum Beam Science Research Directorate, Takasaki Advanced Radiation Research Institute, Takasaki, Japan

Duration: 35'

In-situ experiments and characterization in the Helium Ion Microscope (17)

Gregor Hlawacek, Institute of Ion Beam Physics and Materials Research, HZDR, Germany

Duration: 35'

Capabilities of microanalysis using single MeV ions (18)

Zdravko Siketić, Ruđer Bošković Institute, Laboratory for ion beam interactions, Zagreb, Croatia

Duration: 35'

Nano structure fabrication using single heavy ions of MeV/amu energy range, techniques and applications (21)

Guanghua Du, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China

Duration: 35'

What can we learn about radiation induced defect centers with capacitance transient techniques: energy level diagrams, thermal stability, introduction rates and more (25)

Ivana Capan, Ruđer Bošković Institute, Laboratory for Semiconductors, Zagreb, Croatia

Duration: 35'